? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data data sheet 4998, rev. - rad tolerant low r ds hermetic power mosfet - p-channel features: ? 100 volt, 0.023 ohm, 90a mosfet (current limited to 50a by package) ? characterized for v gs of 4.5v for logic level drive ? total dose characterized to 300 krad ? single event effect capability characterized to 60 mevcm 2 /mg let ? isolated hermetic metal package; ultra low r ds (on) ? ceramic seals with glidcop leads ? also available with glass seals and copper core alloy 52 leads maximum ratings all ratings are at t c = 25 c unless otherwise specified. rating symbol min. typ. max. units gate to source voltage v gs - - 20 volts on-state drain current i d25 - - - 50 amps pulsed drain current i dm - - - 90 amps operating and storage temperature t j /t stg -55 - +150 c total device dissipation p d - - 225 watts thermal resistance, junction to case r jc - - 0.55 c/w electrical characteristics characteristic symbol min. typ. max. units drain to source breakdown voltage v gs = 0v, i d = - 250 a bv dss -100 - - volts static drain to source on state resistance v gs = - 10v, i d = - 20a v gs = - 4.5v, i d = - 15a r ds(on) - - 0.019 0.021 0.023 0.025 ? gate threshold voltage v ds = v gs , i d = - 250 a v gs(th) - 1 - - 3 volts forward transconductance v ds = - 15v, i d = - 20a g fs - 80 - s(1/ ? ) zero gate voltage drain current v ds = 0.8 x max. rating, v gs = 0v, t j = 25 c t j = 125 c i dss - - - 1 - 500 a gate to source leakage forward v gs = 20v gate to source leakage reverse v gs = -20v i gss - - 100 -100 na turn on delay time v dd = - 50v rise time i d = - 50a turn off delay time v gs = - 10v fall time r g = 1 ? t d(on) t r t d(off) t f - 20 510 145 870 30 855 220 1300 nsec diode forward voltage i f = - 20a, v gs = 0v pulse test, t 300 s, duty cycle d 2 % v sd - - 1.0 - 1.5 volts reverse recovery time t j = 25 c, i f = - 20a, v r = - 50v di/dt = - 100a/ sec t rr - 80 120 nsec input capacitance v gs = 0 v, output capacitance v ds = - 50 v, reverse transfer capac itance f = 1.0mhz c iss c oss c rss - 11100 700 1700 - pf SBF50P10-023L
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron technical data data sheet 4998, rev. - post-total dose (up to tid ratings) irradiation data characteristic symbol min. typ. max. units drain to source breakdown voltage v gs = 0v, i d = -250 a bv dss -100 - - volts static drain to source on state resistance v gs = -10v, i d = -20a v gs = - 4.5v, i d = - 15a r ds(on) - 0.019 0.021 0.023 0.025 ? gate threshold voltage v ds = v gs , i d = -250 a v gs(th) -1 - -3 volts zero gate voltage drain current v ds = 0.8 x max. rating, v gs = 0v, t j = 25 c i dss - - -1 a gate to source leakage forward v gs = 20v gate to source leakage reverse v gs = -20v i gss - - 100 -100 na diode forward voltage i f = -20a, v gs = 0v pulse test, t 300 s, duty cycle d 2 % v sd - - 1.0 -1.5 volts single event effect safe operating area v ds (v) ion let (mevcm 2 /mg) energy (mev) range ( m) v gs =0v v gs = 5v v gs = 10v v gs = 15v v gs = 20v br 37.47 278 36.1 -100 -100 -100 -100 -100 i 59.72 320 31.1 -100 -100 -100 -100 -100 see safe operation area -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs (v) vds (v) br i SBF50P10-023L
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - www.sensitron.com ? e-mail address - sales@sensitron.com ? SBF50P10-023L sensitron technical data data sheet 4998, rev. - mechanical dimensions: in inches / mm pinout table to-254cg (modified) device type pin-1 pin-2 pin-3 p-channel mosfet modified to-254 package drain source gate disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , sa fety should be ensured by us ing semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconductor be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconducto r be liable for any failure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s ) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed writ ten permissi on of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies ), the necessary procedures are to be ta ken in accordance with related laws a nd regulations.
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